FENGHUA GaN Power Module

The Fenghua Microelectronics GaN IPM (Intelligent Power Module) series leverages silicon-substrate gallium nitride (GaN-on-Si) enhancement-mode high electron mobility transistor (HEMT) technology to deliver reliable performance in high-frequency, high-efficiency power conversion applications.

With a highly integrated architecture, the series improves power density, enhances thermal performance, and reduces the need for external components. As a professional GaN IPM module supplier in China, Fenghua provides solutions suitable for both industrial and consumer applications. All products comply with RoHS standards and offer stable electrical performance and long-term reliability.

GaN Power Module Key Technical Features

Ultra-Low Conduction Losses
Achieves on-resistance as low as 1.9 mΩ (NSG100LG025BD), helping reduce conduction losses and improve overall system efficiency.
High-Frequency Switching Capability
Supports switching frequencies up to 5 MHz, with low gate charge (11 nC) and zero reverse recovery charge, suitable for high-frequency resonant designs.
Comprehensive Protection Mechanisms
Integrates undervoltage lockout (UVLO), overvoltage lockout (OVLO), and overtemperature protection (OTP) to ensure safe and stable operation.
High dv/dt Immunity
Provides 50 V/ns noise immunity, helping suppress EMI and maintain stable switching performance.
Advanced Thermal Management
Junction-to-case thermal resistance as low as 0.3°C/W (NSG100LG025BD), supporting continuous high-current operation and improving device lifetime.
Compact Packaging Design
Available in ultra-thin LGA and QFN packages (5.0 mm × 6.0 mm to 7.0 mm × 4.7 mm), reducing PCB space and improving integration.

GaN IPM Product Specifications

NSG100LG025BD
Discrete GaN HEMT module with 1.9 mΩ on-resistance, supporting over 200 A continuous current. Packaged in ultra-thin LGA (5.0 mm × 6.0 mm) with 0.3°C/W thermal resistance.
Suitable for high-frequency DC-DC converters, BMS protection, and high-power mobile power applications.

NDG100QF070MD
Integrated GaN half-bridge module with 5.5 mΩ on-resistance and built-in gate driver, supporting switching frequencies up to 5 MHz. Packaged in QFN (5.5 mm × 4.5 mm), with 20 ns propagation delay and 1 ns delay matching. Includes integrated VCC/BST capacitors for simplified PCB layout.
Recommended for data center power supplies, automotive OBC, and LLC resonant converters.

NDG100QF032MD
High-current GaN half-bridge with 2.4 mΩ on-resistance, supporting 60 A continuous current. Packaged in QFN (7.0 mm × 4.7 mm), with 50 V/ns dv/dt immunity.
Suitable for 48 V motor drives (500 W–1 kW), industrial servo systems, and robotic joint control.

GaN IPM Typical Applications

This series is designed for high-power-density applications in a variety of industries:
Consumer Electronics: High power PC case adapters and mobile power banks (NSG100LG025BD).
Automotive Systems: On-board charger (OBC) and DC-DC converter (NDG100QF070MD).
Industrial Automation: Precision servo drives and Robotic joint actuators (NDG100QF032MD).
Data Center Infrastructure: Server power supplies and high-frequency buck-boost Converter (NDG100QF070MD).
Renewable Energy Systems: Battery protection (BMS) and PV inverters.

The Fenghua Microelectronics GaN IPM series is a product that integrates high efficiency, compact design and reliable protection. It provides low conduction losses, high-frequency switching capability to help reduce system size and improve system performance.

Please see the datasheet or contact us for technical support for detailed electrical parameters and application design guidelines.